Spin-polarized transport in inhomogeneous magnetic semiconductors: theory of magnetic/nonmagnetic p-n junctions.
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A theory of spin-polarized transport in inhomogeneous magnetic semiconductors is developed and applied to magnetic/nonmagnetic p-n junctions. Several phenomena with possible spintronic applications are predicted, including spin-voltaic effect, spin valve effect, exponential and giant magnetoresistance. It is demonstrated that only nonequilibrium spin can be injected across the space-charge region of a p-n junction, so that there is no spin injection (or extraction) at low bias.
[1] Andrew G. Glen,et al. APPL , 2001 .
[2] S. Tiwari. Compound semiconductor device physics , 1992 .