Progress and prospects of GaN-based VCSEL from near UV to green emission
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Hao-Chung Kuo | Hui Yang | Tien-Chang Lu | Hsin-Chieh Yu | Jianping Liu | Zhi-Wei Zheng | Baoping Zhang | Rong-Bin Xu | Hui Yang | H. Kuo | H. Yu | Baoping Zhang | T. Lu | Zhiwei Zheng | Y. Mei | R. Xu | Jianping Liu | Yang Mei | Z. Zheng
[1] N. Grandjean,et al. Critical thickness of GaN on AlN: impact of growth temperature and dislocation density , 2017 .
[2] C. Weisbuch,et al. Direct measurement of Auger electrons emitted from a semiconductor light-emitting diode under electrical injection: identification of the dominant mechanism for efficiency droop. , 2013, Physical review letters.
[3] M. Abgrall,et al. Absolute Frequency Measurement of the 40Ca+ 4s 2S1/2 -3d2D5/2 Clock Transition , 2008, 0806.1414.
[4] Joel R. Wendt,et al. Optical properties of two‐dimensional photonic lattices fabricated as honeycomb nanostructures in compound semiconductors , 1994 .
[5] Tsuyoshi Murata,et al. {m , 1934, ACML.
[6] M. Takamoto,et al. Trapping of neutral mercury atoms and prospects for optical lattice clocks. , 2007, Physical review letters.
[7] F. Kish,et al. A VERTICAL CAVITY LIGHT EMITTING INGAN QUANTUM WELL HETEROSTRUCTURE , 1999 .
[8] Shing-chung Wang,et al. High-temperature operation of GaN-based vertical-cavity surface-emitting lasers , 2017 .
[9] Mingming Tan,et al. Visible light communications using a directly modulated 422 nm GaN laser diode. , 2013, Optics letters.
[10] S. Nakamura,et al. Room‐temperature continuous‐wave operation of InGaN multi‐quantum‐well structure laser diodes , 1996 .
[11] A. Nurmikko,et al. Near ultraviolet optically pumped vertical cavity laser , 2000 .
[12] M. Dawson,et al. High-Speed Visible Light Communications Using Individual Pixels in a Micro Light-Emitting Diode Array , 2010, IEEE Photonics Technology Letters.
[13] S. Denbaars,et al. Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture , 2015 .
[14] Jeong Yong Lee,et al. Characterization of Pit Formation in III-Nitrides Grown by Metalorganic Chemical Mavor Deposition , 2002 .
[15] High efficiency GaN‐based LEDs using plasma selective treatment of p‐GaN surface , 2003 .
[16] Christoph Affolderbach,et al. Microwave frequency reference based on VCSEL-driven dark-line resonances in Cs vapor , 2000, Proceedings of the 2000 IEEE/EIA International Frequency Control Symposium and Exhibition (Cat. No.00CH37052).
[17] Yi’an Yin,et al. Performance enhancement of blue light-emitting diodes with a special designed AlGaN/GaN superlattice electron-blocking layer , 2011 .
[18] S. Chang,et al. GaN-Based LEDs With a Chirped Multiquantum Barrier Structure , 2012, IEEE Photonics Technology Letters.
[19] R. Michalzik. VCSELs: Fundamentals, Technology and Applications of Vertical-Cavity Surface-Emitting Lasers , 2012 .
[20] H. Kuo,et al. Crack-free GaN∕AlN distributed Bragg reflectors incorporated with GaN∕AlN superlattices grown by metalorganic chemical vapor deposition , 2006 .
[21] F. Kish,et al. A quasicontinuous wave, optically pumped violet vertical cavity surface emitting laser , 2000 .
[22] Oliver Bimber,et al. Displays: Fundamentals and Applications , 2011 .
[23] Werner Wegscheider,et al. Microscopic analysis of optical gain in InGaN/GaN quantum wells , 2006 .
[24] P. Gill,et al. Hertz-Level Measurement of the Optical Clock Frequency in a Single 88Sr+ Ion , 2004, Science.
[25] Haiying Shen,et al. TOP , 2019, Encyclopedia of Autism Spectrum Disorders.
[26] Hongyang Wang,et al. Effects of matrix layer composition on the structural and optical properties of self-organized InGaN quantum dots , 2013 .
[27] Zach DeVito,et al. Opt , 2017 .
[28] Hui Yang,et al. Low threshold continuous-wave lasing of yellow-green InGaN-QD vertical-cavity surface-emitting lasers. , 2016, Optics express.
[29] H. Gotoh,et al. Low-threshold lasing of InGaN vertical-cavity surface-emitting lasers with dielectric distributed Bragg reflectors , 2003 .
[30] Timothy D. Wilkinson,et al. CLEO: Science and Innovations , 2012, CLEO 2012.
[31] K. Delaney,et al. Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes , 2011 .
[32] G. G. Stokes. "J." , 1890, The New Yale Book of Quotations.
[33] D. Bour,et al. Nitride-based semiconductors for blue and green light-emitting devices , 1997, Nature.
[34] James S. Speck,et al. Nonpolar III-nitride vertical-cavity surface-emitting laser with a photoelectrochemically etched air-gap aperture , 2016 .
[35] Dong-Yul Lee,et al. Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes , 2009 .
[36] H. Kuo,et al. Continuous wave operation of current injected GaN vertical cavity surface emitting lasers at room temperature , 2010 .
[37] Jonathan J. Wierer,et al. Advantages of III‐nitride laser diodes in solid‐state lighting , 2015 .
[38] Yu Peng,et al. Fabrication and performance of blue GaN-based vertical-cavity surface emitting laser employing AlN∕GaN and Ta2O5∕SiO2 distributed Bragg reflector , 2005 .
[39] Tuan Vo-Dinh,et al. Laser‐induced fluorescence spectroscopy for in vivo diagnosis of non‐melanoma skin cancers , 2002, Lasers in surgery and medicine.
[40] J. Carlin,et al. Blue monolithic AlInN-based vertical cavity surface emitting laser diode on free-standing GaN substrate , 2012 .
[41] S. Denbaars,et al. The reduction of efficiency droop by Al0.82In0.18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes , 2012 .
[42] S. Denbaars,et al. 4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication. , 2015, Optics express.
[43] K. Yamanaka,et al. Continuous Wave Operation of GaN Vertical Cavity Surface Emitting Lasers at Room Temperature , 2012, IEEE Journal of Quantum Electronics.
[44] K. Iga,et al. GaInAsP/InP Surface Emitting Injection Lasers , 1979 .
[45] Theeradetch Detchprohm,et al. Relaxation Mechanism of Thermal Stresses in the Heterostructure of GaN Grown on Sapphire by Vapor Phase Epitaxy , 1993 .
[46] C W Oates,et al. Spin-1/2 optical lattice clock. , 2009, Physical review letters.
[47] P. Bhattacharya,et al. InGaN/GaN Quantum Dot Red $(\lambda=630~{\rm nm})$ Laser , 2013, IEEE Journal of Quantum Electronics.
[48] L. Cai,et al. Blue-Violet Lasing of Optically Pumped GaN-Based Vertical Cavity Surface-Emitting Laser With Dielectric Distributed Bragg Reflectors , 2009, Journal of Lightwave Technology.
[49] Marc Ilegems,et al. Recent Progress in the Growth of Highly Reflective Nitride-Based Distributed Bragg Reflectors and Their Use in Microcavities , 2005 .
[50] Mathew C. Schmidt,et al. Gain comparison in polar and nonpolarsemipolar gallium-nitride-based laser diodes , 2012 .
[51] S. Denbaars,et al. Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching , 2014 .
[52] Su-hee Chae,et al. Room-temperature GaN vertical-cavity surface-emitting laser operation in an extended cavity scheme , 2003 .
[53] P. Bhattacharya,et al. A InGaN/GaN quantum dot green (λ=524 nm) laser , 2011 .
[54] M. Dawson,et al. Visible-Light Communications Using a CMOS-Controlled Micro-Light- Emitting-Diode Array , 2012, Journal of Lightwave Technology.
[55] S. C. Wang,et al. Design and fabrication of a InGaN vertical-cavity surface-emitting laser with a composition-graded electron-blocking layer , 2014 .
[56] Jiangyong Zhang,et al. Blue-green optically pumped GaN-based vertical cavity surface emitting laser , 2008 .
[57] Jeffrey Y. Tsao,et al. The potential of III‐nitride laser diodes for solid‐state lighting , 2014 .
[58] P. Lagoudakis,et al. Blue lasing at room temperature in an optically pumped lattice-matched AlInN=GaN VCSEL structure , 2007 .
[59] O. Brandt,et al. Crack-free and conductive Si-doped AlN∕GaN distributed Bragg reflectors grown on 6H-SiC(0001) , 2004 .
[60] Rick E. Sneed,et al. In vivo cancer diagnosis of the esophagus using differential normalized fluorescence (DNF) indices , 1995, Lasers in surgery and medicine.
[61] F. Ren,et al. Electrical effects of plasma damage in p-GaN , 1999 .
[62] Miss A.O. Penney. (b) , 1974, The New Yale Book of Quotations.
[63] S N Bagayev,et al. Absolute frequency measurement of the In+ clock transition with a mode-locked laser. , 2000, Optics letters.
[64] H. Kuo,et al. CW lasing of current injection blue GaN-based vertical cavity surface emitting laser , 2008 .
[65] H. Kuo,et al. Room-Temperature Operation of Optically Pumped Blue-Violet GaN-Based Vertical-Cavity Surface-Emitting Lasers Fabricated by Laser Lift-Off , 2006 .
[66] D. Bimberg,et al. Progress in Epitaxial Growth and Performance of Quantum Dot and Quantum Wire Lasers , 2008, Journal of Lightwave Technology.
[67] Catalano,et al. Room temperature lasing at blue wavelengths in gallium nitride microcavities , 1999, Science.
[68] Hao-Chung Kuo,et al. Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer , 2010 .
[69] Baoping Zhang,et al. Efficient hole transport in asymmetric coupled InGaN multiple quantum wells , 2009 .
[70] William S. Wong,et al. Damage-free separation of GaN thin films from sapphire substrates , 1998 .
[71] S. Denbaars,et al. Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact , 2015 .
[72] Jun Ye,et al. Sr Lattice Clock at 1 × 10–16 Fractional Uncertainty by Remote Optical Evaluation with a Ca Clock , 2008, Science.
[73] Theodore D. Moustakas,et al. High reflectivity and broad bandwidth AlN/GaN distributed Bragg reflectors grown by molecular-beam epitaxy , 2000 .
[74] Pleun Maaskant,et al. Carrier distribution in InGaN/GaN tricolor multiple quantum well light emitting diodes , 2009 .
[75] H. Morkoç,et al. GaN, AlN, and InN: A review , 1992 .
[76] J. Carlin,et al. High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN , 2003 .
[77] H. Kuo,et al. The lasing characteristics of GaN-based vertical-cavity surface-emitting laser with AlN-GaN and Ta/sub 2/O/sub 5/--SiO/sub 2/ distributed Bragg reflectors , 2006, IEEE Photonics Technology Letters.
[78] H. Kuo,et al. Improved carrier injection in GaN-based VCSEL via AlGaN/GaN multiple quantum barrier electron blocking layer. , 2015, Optics express.
[79] H. Kuo,et al. Emission characteristics of optically pumped GaN-based vertical-cavity surface-emitting lasers , 2006 .
[80] D. Wineland,et al. Frequency comparison of two high-accuracy Al+ optical clocks. , 2009, Physical review letters.
[81] P. S. Yeh,et al. GaN-based vertical-cavity surface emitting lasers with sub-milliamp threshold and small divergence angle , 2016 .
[82] H. Akiyama,et al. Low Threshold Lasing of GaN-Based VCSELs With Sub-Nanometer Roughness Polishing , 2013, IEEE Photonics Technology Letters.
[83] Baoping Zhang,et al. Low threshold lasing of GaN-based vertical cavity surface emitting lasers with an asymmetric coupled quantum well active region , 2008 .
[84] Andrew G. Glen,et al. APPL , 2001 .
[85] Baoping Zhang,et al. Room temperature continuous wave lasing of electrically injected GaN-based vertical cavity surface emitting lasers , 2014 .