Nonlinear embedding and de‐embedding techniques for large‐signal fet measurements

The manuscript presents a comparison between two nonlinear procedures oriented to the investigation of the intrinsic I/V dynamic characteristics at a transistor's current-generator plane. These approaches, without the need of modeling device trapping and thermal effects, allow to obtain information at the current-generator reference plane that is more strictly linked to the device performance in terms of output power and efficiency. Experiments carried out on a 800-μm GaN HEMT are reported. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:2835–2838, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27169

[1]  A. Santarelli,et al.  Scalable Nonlinear FET Model Based on a Distributed Parasitic Network Description , 2008, IEEE Transactions on Microwave Theory and Techniques.

[2]  J. Verspecht,et al.  Large-signal network analysis , 2005, IEEE Microwave Magazine.

[3]  H. Zirath,et al.  An empirical-table based FET model , 1999, 1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282).

[4]  M. Pagani,et al.  Nonlinear RF device modelling in the presence of low‐frequency dispersive phenomena , 2006 .

[5]  Renato G. Bosisio,et al.  Large‐signal microwave transistor modeling using multiharmonic load‐pull measurements , 1992 .

[6]  Alessandro Trifiletti,et al.  A new algorithm to extract the nonlinear model of MESFETS and HEMTS , 1999 .

[7]  D. Schreurs,et al.  Nonlinear Dispersive Modeling of Electron Devices Oriented to GaN Power Amplifier Design , 2010, IEEE Transactions on Microwave Theory and Techniques.

[8]  P.J. Tasker.  Practical waveform engineering , 2009, IEEE Microwave Magazine.

[9]  Herbert Zirath,et al.  Accurate small-signal modeling of HFET's for millimeter-wave applications , 1996 .

[10]  Bart Nauwelaers,et al.  On the evaluation of the high-frequency load line in active devices , 2011, International Journal of Microwave and Wireless Technologies.

[11]  Valeria Vadala,et al.  Characterization of GaN HEMT Low-Frequency Dispersion Through a Multiharmonic Measurement System , 2010, IEEE Transactions on Microwave Theory and Techniques.

[12]  G. Dambrine,et al.  A new method for determining the FET small-signal equivalent circuit , 1988 .

[13]  A. Raffo,et al.  A New Approach to Microwave Power Amplifier Design Based on the Experimental Characterization of the Intrinsic Electron-Device Load Line , 2009, IEEE Transactions on Microwave Theory and Techniques.

[14]  Valeria Vadala,et al.  Accurate GaN HEMT nonquasi-static large-signal model including dispersive effects , 2011 .