论文信息 - EFFECT OF THE SURFACE CONDITION ON THE INTERNAL-STRESS OF A-SI-H, A-SINX-H, AND A-SI-H/A-SINX-H HETEROJUNCTION FILMS - 字舞流文

EFFECT OF THE SURFACE CONDITION ON THE INTERNAL-STRESS OF A-SI-H, A-SINX-H, AND A-SI-H/A-SINX-H HETEROJUNCTION FILMS

K. Liao | Wanlu Wang

[1] Liao Ke-jun,et al. STUDIES OF SOME PROPERTIES OF MECHANICAL-STRESS IN A-SI-H, A-SINX-H AND A-SI-H/A-SINX-H HETEROJUNCTION FILMS , 1988 .

[2] Liao Ke-jun,et al. Effect of internal stress on persistent photoconductivity in a-Si:H/a-SiNx:H layered structure , 1987 .

[3] W. Claassen,et al. On the relation between deposition conditions and (mechanical) stress in plasma silicon nitride layers , 1985 .

[4] H. Fritzsche,et al. Effect of the surface condition on the conductance of hydrogenated amorphous silicon , 1984 .

[5] B. Aker. Oxide and adsorbate effects on the conductance of a-Si:H in ultrahigh vacuum , 1984 .

[6] D. Lang,et al. Effect of silane dilution on intrinsic stress in glow discharge hydrogenated amorphous silicon films , 1984 .

[7] H. Fritzsche,et al. Photoinduced metastable surface effects in boron‐doped hydrogenated amorphous silicon films , 1983 .

[8] M. Tanielian,et al. Adsorbate effects on the electrical conductance of a-Si: H , 1982 .

[9] H. Fritzsche. Characterized of glow-discharge deposited a-Si:H , 1980 .

[10] E. Symbalisty,et al. Effect of adsorbed gases on the conductance of amorphous films of semiconducting silicon‐hydrogen alloys , 1978 .