论文信息 - Editors’ Choice—Electrical Properties and Deep Traps in α-Ga2O3:Sn Films Grown on Sapphire by Halide Vapor Phase Epitaxy - 字舞流文

Editors’ Choice—Electrical Properties and Deep Traps in α-Ga2O3:Sn Films Grown on Sapphire by Halide Vapor Phase Epitaxy

S. Stepanov | A. Vasilev | I. Shchemerov | V. Nikolaev | E. Yakimov | A. Pechnikov | A. Kochkova | S. Pearton | A. Polyakov | N. Smirnov | A. Chernykh | I. Shchemerov