Effect of GaAs Intermediary Layer Thickness on the Properties of (Ga,Mn)As Tri-Layer Structures
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H. Ohno | F. Matsukura | Y. Sato | D. Chiba
[1] Hideo Ohno,et al. Tunneling magnetoresistance in (Ga,Mn)As-based heterostructures with a GaAs barrier , 2004 .
[2] H. Ohno,et al. Valence band barrier at (Ga,Mn)As/GaAs interfaces , 2002 .
[3] Stuart A. Wolf,et al. Spintronics: A Spin-Based Electronics Vision for the Future , 2001, Science.
[4] Y. Higo,et al. Large Tunneling Magnetoresistance in GaMnAs / AlAs / GaMnAs Ferromagnetic Semiconductor Tunnel Junctions , 2001 .
[5] Hideo Ohno,et al. Magnetoresistance effect and interlayer coupling of (Ga, Mn)As trilayer structures , 2000 .
[6] H. Ohno. Properties of ferromagnetic III–V semiconductors , 1999 .
[7] H. Ohno,et al. Making nonmagnetic semiconductors ferromagnetic , 1998, Science.
[8] H. Ohno,et al. (Ga, Mn)As/GaAs Diluted Magnetic Semiconductor Superlattice Structures Prepared by Molecular Beam Epitaxy , 1997 .
[9] J. Moodera,et al. Large magnetoresistance at room temperature in ferromagnetic thin film tunnel junctions. , 1995, Physical review letters.
[10] T. Miyazaki,et al. Giant magnetic tunneling e ect in Fe/Al2O3/Fe junction , 1995 .
[11] J. Simmons. Generalized Formula for the Electric Tunnel Effect between Similar Electrodes Separated by a Thin Insulating Film , 1963 .