Lithography variability driven cell characterization and layout optimization for manufacturability
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[1] Alek C. Chen,et al. Process capability comparison between LELE DPT and spacer for NAND flash 32nm and below , 2008, Lithography Asia.
[2] Kanak Agarwal. Frequency domain decomposition of layouts for double dipole lithography , 2010, Design Automation Conference.
[3] Uwe Schroeder,et al. Contact mask optimization and SRAF design , 2009, Advanced Lithography.
[4] T. Sanuki,et al. Variability aware modeling and characterization in standard cell in 45 nm CMOS with stress enhancement technique , 2008, 2008 Symposium on VLSI Technology.
[5] Vincent Wiaux,et al. Double pattern EDA solutions for 32nm HP and beyond , 2007, SPIE Advanced Lithography.
[6] E. Schoell,et al. Impact of photoresist composition and polymer chain length on line edge roughness probed with a stochastic simulator , 2007 .
[7] Lars W. Liebmann,et al. Resolution enhancement techniques in optical lithography: It's not just a mask problem , 2001, Photomask Japan.
[8] A. Asenov,et al. Intrinsic parameter fluctuations in decananometer MOSFETs introduced by gate line edge roughness , 2003 .
[9] Edmund Y. Lam,et al. Performance optimization for gridded-layout standard cells , 2004, SPIE Photomask Technology.
[10] E. Gogolides,et al. Line edge roughness and critical dimension variation: Fractal characterization and comparison using model functions , 2004 .
[11] Evangelos Gogolides,et al. Photoresist line-edge roughness analysis using scaling concepts , 2004 .
[12] Jerry Liu,et al. Advanced self-aligned double patterning development for sub-30-nm DRAM manufacturing , 2009, Advanced Lithography.
[13] Chris A. Mack,et al. Stochastic modeling in lithography: autocorrelation behavior of catalytic reaction–diffusion systems , 2009 .
[14] Manfred Engelhardt,et al. Impact of line edge roughness on the resistivity of nanometer-scale interconnects , 2004 .
[15] Kun Yuan,et al. A new graph-theoretic, multi-objective layout decomposition framework for Double Patterning Lithography , 2010, 2010 15th Asia and South Pacific Design Automation Conference (ASP-DAC).
[16] Dejan Markovic,et al. Linear analysis of random process variability , 2008, ICCAD 2008.
[17] Harry J. Levinson,et al. Line edge roughness impact on critical dimension variation , 2007, SPIE Advanced Lithography.
[18] K. Agarwal,et al. A Test Structure for Assessing Individual Contact Resistance , 2009, 2009 IEEE International Conference on Microelectronic Test Structures.
[19] G. Bonilla,et al. On the contribution of line-edge roughness to intralevel TDDB lifetime in low-k dielectrics , 2009, 2009 IEEE International Reliability Physics Symposium.
[20] Costas Spanos,et al. Impact of gate line edge roughness on double-gate FinFET performance variability , 2008, SPIE Advanced Lithography.
[21] Harry J. Levinson,et al. The transfer of photoresist LER through etch , 2006, SPIE Advanced Lithography.
[22] Evangelos Gogolides,et al. Line-edge-roughness transfer during plasma etching: modeling approaches and comparison with experimental results , 2009 .
[23] A. Asenov,et al. Intrinsic threshold voltage fluctuations in decanano MOSFETs due to local oxide thickness variations , 2002 .
[24] Sani R. Nassif,et al. Characterizing Process Variation in Nanometer CMOS , 2007, 2007 44th ACM/IEEE Design Automation Conference.
[25] Suman Datta,et al. Impact of line-width roughness on Intel's 65-nm process devices , 2007, SPIE Advanced Lithography.
[26] Costas J. Spanos,et al. Comparative study of line width roughness (LWR) in next-generation lithography (NGL) processes , 2010, Advanced Lithography.
[27] David Z. Pan,et al. Electrical impact of line-edge roughness on sub-45-nm node standard cells , 2010 .
[28] Andrew B. Kahng,et al. Auxiliary pattern-based optical proximity correction for better printability, timing, and leakage control , 2008 .
[29] Jae-Seok Yang,et al. Overlay aware interconnect and timing variation modeling for double patterning technology , 2008, ICCAD 2008.
[30] E. Nowak,et al. Weibull breakdown characteristics and oxide thickness uniformity , 2000 .
[31] David Z. Pan,et al. Layout decomposition of self-aligned double patterning for 2D random logic patterning , 2011, Advanced Lithography.
[32] David Z. Pan,et al. On stress aware active area sizing, gate sizing, and repeater insertion , 2009, ISPD '09.
[33] Vivek Raghavan,et al. Model-assisted routing for improved lithography robustness , 2007, SPIE Advanced Lithography.
[34] David Z. Pan,et al. Flexible 2D layout decomposition framework for spacer-type double pattering lithography , 2011, 2011 48th ACM/EDAC/IEEE Design Automation Conference (DAC).
[35] Li-Da Huang,et al. Optical proximity correction (OPC): friendly maze routing , 2004, DAC.
[36] Yunfei Deng,et al. Decomposition strategies for self-aligned double patterning , 2010, Advanced Lithography.
[37] David Blaauw,et al. Stress aware layout optimization , 2008, ISPD '08.
[38] Wen-Chin Lee,et al. Ultimate contact resistance scaling enabled by an accurate contact resistivity extraction methodology for sub-20 nm node , 2006, 2009 Symposium on VLSI Technology.
[39] Yorick Trouiller,et al. SRAF enhancement using inverse lithography for 32nm hole patterning and beyond , 2009, Photomask Technology.
[40] Jae-Seok Yang,et al. Layout aware line-edge roughness modeling and poly optimization for leakage minimization , 2011, 2011 48th ACM/EDAC/IEEE Design Automation Conference (DAC).
[41] Yi-Shiang Chang,et al. Full area pattern decomposition of self-aligned double patterning for 30nm node NAND FLASH process , 2010, Advanced Lithography.
[42] Andrew R. Neureuther,et al. From poly line to transistor: building BSIM models for non-rectangular transistors , 2006, SPIE Advanced Lithography.
[43] Karthik Balakrishnan,et al. Measurement and analysis of contact plug resistance variability , 2009, 2009 IEEE Custom Integrated Circuits Conference.
[44] Kun Yuan,et al. ELIAD: Efficient lithography aware detailed router with compact post-OPC printability prediction , 2008, 2008 45th ACM/IEEE Design Automation Conference.
[45] Michael C. Smayling,et al. Low k1 logic design using gridded design rules , 2008, SPIE Advanced Lithography.
[46] Liang Deng,et al. Fast and Accurate OPC for Standard-Cell Layouts , 2007, 2007 Asia and South Pacific Design Automation Conference.
[47] S. Narasimha,et al. An integrated methodology for accurate extraction of S/D series resistance components in nanoscale MOSFETs , 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
[48] Kun Yuan,et al. Layout Decomposition for Triple Patterning Lithography , 2015, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.
[49] Rajendran Panda,et al. Electrical impact of line-edge roughness on sub-45nm node standard cell , 2009, Advanced Lithography.
[50] David Laidler,et al. Overlay metrology for double patterning processes , 2009, Advanced Lithography.
[51] G. Gallatin,et al. Residual speckle in a lithographic illumination system , 2009 .
[52] Yu Cao,et al. Design rule optimization of regular layout for leakage reduction in nanoscale design , 2008, 2008 Asia and South Pacific Design Automation Conference.
[53] Andrzej J. Strojwas,et al. Design methodology for IC manufacturability based on regular logic-bricks , 2005, Proceedings. 42nd Design Automation Conference, 2005..
[54] Kurt Keutzer,et al. Impact of spatial intrachip gate length variability on theperformance of high-speed digital circuits , 2002, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..
[55] David Z. Pan,et al. RADAR: RET-aware detailed routing using fast lithography simulations , 2005, Proceedings. 42nd Design Automation Conference, 2005..
[56] John Arnold,et al. Integration of EUV lithography in the fabrication of 22-nm node devices , 2009, Advanced Lithography.
[57] Philippe Hurat,et al. Layout printability optimization using a silicon simulation methodology , 2004, International Symposium on Signals, Circuits and Systems. Proceedings, SCS 2003. (Cat. No.03EX720).
[58] Peng Yu,et al. A Unified Non-Rectangular Device and Circuit Simulation Model for Timing and Power , 2006, 2006 IEEE/ACM International Conference on Computer Aided Design.
[59] David Z. Pan,et al. Modeling and characterization of contact-edge roughness for minimizing design and manufacturing variations , 2010 .
[60] Thomas Klimpel,et al. Analysis of topography effects on lithographic performance in double patterning applications , 2009, Advanced Lithography.
[61] Yunfei Deng,et al. Modeling and characterization of contact-edge roughness for minimizing design and manufacturing variations in 32-nm node standard cell , 2010, Advanced Lithography.
[62] Kuen-Yu Tsai,et al. A new method to improve accuracy of leakage current estimation for transistors with non-rectangular gates due to sub-wavelength lithography effects , 2008, ICCAD 2008.
[63] David Z. Pan,et al. Total sensitivity based dfm optimization of standard library cells , 2010, ISPD '10.
[64] Yao-Wen Chang,et al. Multilevel Full-Chip Gridless Routing With Applications to Optical-Proximity Correction , 2007, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.
[65] Andrew B. Kahng,et al. Timing Yield-Aware Color Reassignment and Detailed Placement Perturbation for Bimodal CD Distribution in Double Patterning Lithography , 2010, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.
[66] Yu Cao,et al. Statistical modeling and simulation of threshold variation under dopant fluctuations and line-edge roughness , 2008, 2008 45th ACM/IEEE Design Automation Conference.
[67] Jiang Hu,et al. Standard cell characterization considering lithography induced variations , 2006, 2006 43rd ACM/IEEE Design Automation Conference.
[68] Andreas Erdmann,et al. A comprehensive resist model for the prediction of line-edge roughness material and process dependencies in optical lithography , 2008, SPIE Advanced Lithography.
[69] Stephen P. Boyd,et al. Convex Optimization , 2004, Algorithms and Theory of Computation Handbook.
[70] Lars W. Liebmann,et al. OPC simplification and mask cost reduction using regular design fabrics , 2009, Advanced Lithography.
[71] Yi-Kan Cheng,et al. DFM viewpoints of cell-level layout assessments and indications for concurrent layout optimization , 2008, Photomask Technology.
[72] Lawrence T. Pileggi,et al. Design Methodology of Regular Logic Bricks for Robust Integrated Circuits , 2006, 2006 International Conference on Computer Design.
[73] C. Mack. Fundamental principles of optical lithography , 2007 .
[74] Ting-Chi Wang,et al. Maze routing with OPC consideration , 2005, Proceedings of the ASP-DAC 2005. Asia and South Pacific Design Automation Conference, 2005..
[75] Lars W. Liebmann,et al. Taming the final frontier of optical lithography: design for sub-resolution patterning , 2010, Advanced Lithography.
[76] Geert Vandenberghe,et al. Hyper-NA imaging of 45nm node random CH layouts using inverse lithography , 2008, SPIE Advanced Lithography.
[77] Kun Yuan,et al. Double Patterning Layout Decomposition for Simultaneous Conflict and Stitch Minimization , 2010, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.
[78] Byoung-Ho Lee,et al. Experimental study of contact edge roughness on sub-100 nm various circular shapes , 2005, SPIE Advanced Lithography.
[79] Ching-Te Chuang,et al. Random Dopant Fluctuation in Limited-Width FinFET Technologies , 2007, IEEE Transactions on Electron Devices.
[80] Kenji Yamazaki,et al. Influence of edge roughness in resist patterns on etched patterns , 1998 .
[81] Puneet Gupta,et al. Investigation of diffusion rounding for post-lithography analysis , 2008, 2008 Asia and South Pacific Design Automation Conference.
[82] Thomas Schmoeller,et al. Split, overlap/stitching, and process design for double patterning considering local reflectivity variation by using rigorous 3D wafer-topography/lithography simulation , 2009, Advanced Lithography.
[83] Philippe Hurat,et al. Implementation of silicon-validated variability analysis and optimization for standard cell libraries , 2008, SPIE Advanced Lithography.
[84] David Z. Pan,et al. Double patterning technology friendly detailed routing , 2008, ICCAD 2008.