Mechanistic Understanding of Polarization‐Type Potential‐Induced Degradation in Crystalline‐Silicon Photovoltaic Cell Modules

Potential‐induced degradation (PID) has been identified as a central reliability issue of photovoltaic (PV) cell modules. Several types of PID depend on the cell structure. Among those types, polarization‐type PID, which is characterized by reductions in short‐circuit current density (JSC) and open‐circuit voltage (VOC), is the fastest PID mode. Additionally, polarization‐type PID occurs readily at room temperature or at markedly low magnitudes of electric potential difference. Therefore, polarization‐type PID is a severe difficulty affecting silicon PV modules. Recently, degradation behavior, preventive measures, and mechanism have been investigated. As described herein, mechanistic aspects of polarization‐type PID are specifically examined and details of a recently proposed model involving a charge accumulation process at K centers in SiNx dielectric layers: the K‐center model are discussed. The K‐center model consistently explains previously reported results of experimentation, which indicates the validity of this model. Discussions presented herein are expected to improve the mechanistic understanding of polarization‐type PID in the PV community and to stimulate further discussions and verifications of the model.

[1]  A. Masuda,et al.  Polarization-Type Potential-Induced Degradation in Front-Emitter p-Type and n-Type Crystalline Silicon Solar Cells , 2022, ACS omega.

[2]  I. Osaka,et al.  Stability improvement mechanism due to less charge accumulation in ternary polymer solar cells , 2022, npj Flexible Electronics.

[3]  A. Masuda,et al.  Effects of SiNx refractive index and SiO2 thickness on polarization‐type potential‐induced degradation in front‐emitter n‐type crystalline‐silicon photovoltaic cell modules , 2022, Energy Science & Engineering.

[4]  P. Hacke,et al.  Impact of illumination and encapsulant resistivity on polarization‐type potential‐induced degradation on n‐PERT cells , 2021, Progress in Photovoltaics: Research and Applications.

[5]  A. Masuda,et al.  Potential‐induced degradation in high‐efficiency n‐type crystalline‐silicon photovoltaic modules: A literature review , 2021, Solar RRL.

[6]  A. Masuda,et al.  Effects of passivation configuration and emitter surface doping concentration on polarization-type potential-induced degradation in n-type crystalline-silicon photovoltaic modules , 2021, Solar Energy Materials and Solar Cells.

[7]  J. Bauer,et al.  Time‐Resolved Investigation of Transient Field Effect Passivation States during Potential‐Induced Degradation and Recovery of Bifacial Silicon Solar Cells , 2021, Solar RRL.

[8]  K. Marumoto,et al.  Deterioration mechanism of perovskite solar cells by operando observation of spin states , 2020, Communications Materials.

[9]  T. Ishii,et al.  Potential‐induced degradation in photovoltaic modules composed of interdigitated back contact solar cells in photovoltaic systems under actual operating conditions , 2020, Progress in Photovoltaics: Research and Applications.

[10]  A. Masuda,et al.  Effect of a SiO2 film on the potential-induced degradation of n-type front-emitter crystalline Si photovoltaic modules , 2019, Japanese Journal of Applied Physics.

[11]  Stephan Großer,et al.  Root cause analysis on corrosive potential-induced degradation effects at the rear side of bifacial silicon PERC solar cells , 2019, Solar Energy Materials and Solar Cells.

[12]  A. Masuda,et al.  Universal explanation for degradation by charge accumulation in crystalline Si photovoltaic modules with application of high voltage , 2019, Applied Physics Express.

[13]  J. Bauer,et al.  Microstructural Analysis of Local Silicon Corrosion of Bifacial Solar Cells as Root Cause of Potential‐Induced Degradation at the Rear Side , 2019, physica status solidi (a).

[14]  A. Masuda,et al.  Influence of sodium on the potential-induced degradation for n-type crystalline silicon photovoltaic modules , 2019, Applied Physics Express.

[15]  Y. Zhou,et al.  Reducing potential induced degradation of silicon solar cells by using a liquid oxidation technique , 2018, Solar Energy Materials and Solar Cells.

[16]  Wei Luo,et al.  Elucidating potential‐induced degradation in bifacial PERC silicon photovoltaic modules , 2018, Progress in Photovoltaics: Research and Applications.

[17]  Atsushi Masuda,et al.  Multistage performance deterioration in n-type crystalline silicon photovoltaic modules undergoing potential-induced degradation , 2018, Microelectron. Reliab..

[18]  C. Yamamoto,et al.  Comprehensive study of potential‐induced degradation in silicon heterojunction photovoltaic cell modules , 2018 .

[19]  K. Ohdaira,et al.  Degradation behavior of crystalline silicon solar cells in a cell-level potential-induced degradation test , 2017 .

[20]  C. Yamamoto,et al.  Reduction in the short-circuit current density of silicon heterojunction photovoltaic modules subjected to potential-induced degradation tests , 2017 .

[21]  Sungeun Park,et al.  Potential induced degradation of n‐type crystalline silicon solar cells with p+ front junction , 2017 .

[22]  Atsushi Masuda,et al.  Changes in the current density–voltage and external quantum efficiency characteristics of n-type single-crystalline silicon photovoltaic modules with a rear-side emitter undergoing potential-induced degradation , 2016 .

[23]  Dmitriy Marinskiy,et al.  Drift characteristics of mobile ions in SiNx films and solar cells , 2015 .

[24]  A. Masuda,et al.  Potential-induced degradation in photovoltaic modules based on n-type single crystalline Si solar cells , 2015 .

[25]  Valentin D. Mihailetchi,et al.  Potential-induced Degradation for Encapsulated n-type IBC Solar Cells with Front Floating Emitter☆ , 2015 .

[26]  D. Schroder,et al.  Manipulation of K center charge states in silicon nitride films to achieve excellent surface passivation for silicon solar cells , 2014 .

[27]  K. Weber,et al.  Improved silicon surface passivation achieved by negatively charged silicon nitride films , 2009 .

[28]  W. L. Warren,et al.  Paramagnetic point defects in amorphous silicon dioxide and amorphous silicon nitride thin films , 1992 .

[29]  Patrick M. Lenahan,et al.  First observation of the 29Si hyperfine spectra of silicon dangling bond centers in silicon nitride , 1990 .

[30]  R. Hezel,et al.  Low‐Temperature Surface Passivation of Silicon for Solar Cells , 1989 .

[31]  J. Yeh,et al.  A Well-Controlled PSG Layer on Silicon Solar Cells against Potential Induced Degradation , 2015 .

[32]  O. Breitenstein,et al.  Explanation of potential-induced degradation of the shunting type by Na decoration of stacking faults in Si solar cells , 2014 .