论文信息 - Analytical Models for Drain Current and Gate Capacitance in Amorphous InGaZnO Thin-Film Transistors With Effective Carrier Density

Analytical Models for Drain Current and Gate Capacitance in Amorphous InGaZnO Thin-Film Transistors With Effective Carrier Density

Analytical drain current and gate capacitance models for amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) over sub- and above-threshold regions are proposed by adopting an effective carrier density for the dominant carrier density. The effective carrier density fully considers the free carriers in the conduction band, the localized subgap deep states, and tail states over the bandgap for analytical I-V and C-V characteristics. The proposed analytical models are verified by comparing the measured I-V and C-V characteristics. The proposed models make a time-efficient simulation of a-IGZO TFT-based circuits possible due to their analytical form.

[1] Michael S. Shur,et al. A new analytic model for amorphous silicon thin‐film transistors , 1989 .

[2] Trond Ytterdal,et al. SPICE Models for Amorphous Silicon and Polysilicon Thin Film Transistors , 1997 .

[3] T. Leroux,et al. Static and dynamic analysis of amorphous-silicon field-effect transistors , 1986 .

[4] Luigi Colalongo,et al. A new analytical model for amorphous-silicon thin-film transistors including tail and deep states , 2001 .

[5] U-In Chung,et al. Subgap Density-of-States-Based Amorphous Oxide Thin Film Transistor Simulator (DeAOTS) , 2010, IEEE Transactions on Electron Devices.