Electron spectrum of δ-doped quantum wells by the Thomas–Fermi method at finite temperatures
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[1] Ying Fu. Physical Models of Semiconductor Quantum Devices , 2013 .
[2] I. Sokmen,et al. Effect of magnetic fields on the linear and nonlinear intersubband optical absorption coefficients and refractive index changes in square and graded quantum wells , 2010 .
[3] E. Ozturk. Effect of Magnetic Field on a p-Type δ-Doped GaAs Layer , 2010 .
[4] E. Ozturk. Optical intersubband transitions in double Si δ-doped GaAs under an applied magnetic field , 2009 .
[5] Godfrey Gumbs,et al. Self-consistent electronic subband structure of undoped InAs/GaSb-based type II and broken-gap quantum well systems , 2007 .
[6] I. Rodríguez-Vargas,et al. Subband structure comparison between n- and p-type double delta-doped GaAs quantum wells , 2004 .
[7] I. Sokmen,et al. Intersubband transitions for single, double and triple Si δ-doped GaAs layers , 2003 .
[8] I. Sokmen,et al. The electric field effects on intersubband optical absorption of Si δ-doped GaAs layer , 2003 .
[9] L. Ram-Mohan. Finite Element and Boundary Element Applications in Quantum Mechanics , 2002 .
[10] L. M. Gaggero-Sager,et al. Exchange and correlation via functional of Thomas-Fermi in delta-doped quantum wells , 2001 .
[11] T. Green,et al. Population inversion in an optically-pumped single quantum well , 2000, 2000 International Semiconducting and Insulating Materials Conference. SIMC-XI (Cat. No.00CH37046).
[12] A. V. Perestoronin,et al. Transport and optical properties of tin δ-doped GaAs structures , 1999 .
[13] Kevin F. Brennan,et al. The Physics of Semiconductors , 1999 .
[14] S. Shapoval,et al. Electron transport properties of double delta-doped GaAs structures grown by low-pressure metalorganic chemical vapor deposition , 1998 .
[15] H. Sakaki,et al. Enhancement of intersubband transition energies in GaAs quantum wells by Si delta doping of high concentration , 1998 .
[16] W. Xu. Self-consistent electronic subband structure in terahertz-driven two-dimensional electron gases , 1997 .
[17] M. Cardona,et al. Fundamentals of semiconductors : physics and materials properties , 1997 .
[18] C. Simserides,et al. LETTER TO THE EDITOR: Looking for the maximum low-temperature conductivity in selectively doped ? double heterojunctions , 1996 .
[19] Zhang,et al. Admittance spectroscopy studies of boron delta -doped Si quantum wells. , 1995, Physical review. B, Condensed matter.
[20] Hamers,et al. Atomic structure and bonding of boron-induced reconstructions on Si(001). , 1995, Physical review letters.
[21] J. Mahanty,et al. The influence of Si delta doping on the electronic structure of AlGaAs-GaAs-AlGaAs single quantum wells , 1994 .
[22] J. Poate,et al. Time dependence of dopant diffusion in δ‐doped Si films and properties of Si point defects , 1994 .
[23] Ahn. Intersubband transitions in a delta -doped semiconductor with an applied electric field: Exact solutions. , 1993, Physical review. B, Condensed matter.
[24] C. Simserides,et al. A systematic study of electronic states in n-AlxGa1-xAs/GaAs/n-AlxGa1-xAs selectively doped double-heterojunction structures , 1993 .
[25] Kazuo Nakazato,et al. Single-electron memory , 1993 .
[26] Kang L. Wang,et al. Electron mobility enhancement from coupled wells in delta‐doped GaAs , 1993 .
[27] C. P. Lee,et al. Transmission electron microscopy study of heavily delta‐doped GaAs grown by molecular beam epitaxy , 1993 .
[28] E. Hammerl,et al. Electrical transport between delta layers in silicon , 1992 .
[29] Greene,et al. delta -function-shaped Sb-doping profiles in Si(001) obtained using a low-energy accelerated-ion source during molecular-beam epitaxy. , 1992, Physical review. B, Condensed matter.
[30] Evans,et al. Radiative transitions associated with hole confinement at Si delta -doped planes in GaAs. , 1992, Physical review. B, Condensed matter.
[31] W. Hsu,et al. The δ-Doped In0.25Ga0.75As/GaAs Pseudomorphic High Electron Mobility Transistor Structures Prepared by Low-Pressure Metal Organic Chemical Vapor Deposition* , 1991 .
[32] S. Chuang,et al. Inter‐miniband optical absorption in a modulation‐doped AlxGa1−xAs/GaAs superlattice , 1991 .
[33] Randall L. Headrick,et al. Si(100)‐(2×1)boron reconstruction: Self‐limiting monolayer doping , 1990 .
[34] E. Schubert. Delta doping of III–V compound semiconductors: Fundamentals and device applications , 1990 .
[35] Ioriatti. Thomas-Fermi theory of delta -doped semiconductor structures: Exact analytical results in the high-density limit. , 1990, Physical review. B, Condensed matter.
[36] K. Nakagawa,et al. Atomic layer doped field‐effect transistor fabricated using Si molecular beam epitaxy , 1989 .
[37] K. Klitzing,et al. Quantum‐confined subband transitions of a GaAs sawtooth doping superlattice , 1989 .
[38] C. Fonstad,et al. Selectively δ‐doped quantum well transistor grown by gas‐source molecular‐beam epitaxy , 1988 .
[39] K. Ploog,et al. Subband physics for a “realistic” δ-doping layer , 1988 .
[40] J. Cunningham,et al. Electron-mobility enhancement and electron-concentration enhancement in δ-doped n-GaAs at T=300K , 1987 .
[41] K. Ploog. Delta- (°-) doping in MBE-grown GaAs: Concept and device application , 1987 .
[42] A. Fischer,et al. The delta-doped field-effect transistor (δFET) , 1986, IEEE Transactions on Electron Devices.
[43] G. Hurkx,et al. Self-consistent calculations on GaAs-AlxGa1-xAs heterojunctions , 1985 .
[44] L. Eastman,et al. Complex free‐carrier profile synthesis by ’’atomic‐plane’’ doping of MBE GaAs , 1980 .