Hierarchical layout design of power SiGe HBTs

We discuss the influence of parasitic network resulting from the interconnection layout on power performance of SiGe power HBTs (Heterojunction Bipolar Transistor) under RF(Radio Frequency) operation conditions. It is found that the differences in quiescent operating point between the combining units are caused by the distribution of parasitic interconnection resistances and that the output power of the SiGe power HBTs will sooner or later get smaller than expected in proportion to device size because of this heterogeneity. By analyzing the simulation results we've got, a hierarchical layout design of high-power devices is proposed and verified practically by designing, fabricating and characterizing several SiGe HBTs.

[1]  Development of SiGe/Si HBT , 2001, 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443).

[2]  M. Kaynak,et al.  A matching circuit tuned, multi-band (WLAN and WiMAX), Class — a power amplifier using 0.25μm-SiGe HBT technology , 2008, 2008 Ph.D. Research in Microelectronics and Electronics.

[3]  Z. Ma,et al.  Influence of Unit Subcell Selection on Small- and Large-Signal Performance of SiGe Power HBTs , 2007, 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.