论文信息 - A current-based model for the MOS transistor

A current-based model for the MOS transistor

This paper presents a physics-based model for the MOS transistor, suitable for circuit design and simulation and valid from weak to strong inversion. Each static or dynamic characteristic is accurately described by a single-piece function of two saturation currents.

C. Galup-Montoro | M.C. Schneider | A.I.A. Cunha | O.C. Gouveia-Filho

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