Control of Schottky barrier height using highly doped surface layers
暂无分享,去创建一个
[1] Elements Of Wave Mechanics , 1952 .
[2] H. Henisch. Rectifying Semiconductor Contacts , 1956 .
[3] S. Sze,et al. AVALANCHE BREAKDOWN VOLTAGES OF ABRUPT AND LINEARLY GRADED p‐n JUNCTIONS IN Ge, Si, GaAs, AND GaP , 1966 .
[4] R. Stratton,et al. Field and thermionic-field emission in Schottky barriers , 1966 .
[5] C. R. Crowell. Richardson constant and tunneling effective mass for thermionic and thermionic-field emission in Schottky barrier diodes , 1969 .
[6] C. R. Crowell,et al. Normalized thermionic-field (T-F) emission in metal-semiconductor (Schottky) barriers , 1969 .
[7] Chun-Yen Chang,et al. Carrier transport across metal-semiconductor barriers , 1970 .
[8] R. J. Archer,et al. Dependence of Schottky Barrier Height on Donor Concentration , 1970 .
[9] B. Pruniaux. Transport Properties of the Gold Germanium Gallium Arsenide Metal Semiconductor System , 1971 .
[10] M. W. Thompson,et al. Heavy ion ranges at 100 keV in aluminium , 1973 .
[11] J. Shannon. Reducing the effective height of a Schottky barrier using low‐energy ion implantation , 1974 .