Over 57% efficiency C-band GaN HEMT high power amplifier with internal harmonic manipulation circuits

In this paper, a high efficiency C-band GaN HEMT high power amplifier with internal harmonic manipulation circuits is presented. We employed a new circuit topology for simultaneous high efficiency matching at both fundamental and 2nd-harmonic frequencies. The developed GaN HEMT amplifier has achieved over 57% drain efficiency (50% power-added-efficiency) with 100W output power at C-band. This is the state-of-the-art efficiency of GaN HEMT high power amplifier at C-band to the best of our knowledge.

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