论文信息 - Far-field, efficiency and loss of 980 nm InGaAs/GaInAsP/GaInP SCH quantum well lasers

Far-field, efficiency and loss of 980 nm InGaAs/GaInAsP/GaInP SCH quantum well lasers

The authors have optimised the layer structure of 980 nm Al-free InGaAs/GaInAsP/GaInP SCH-QW lasers to have narrow vertical far-field pattern, high efficiency and low loss for power operation. It has been found that the internal loss decreases with any increase in the bandgap of the GaInAsP confinement layers, any the internal quantum efficiency has a maximum value for the GaInAsP having a bandgap of /spl sim/1.7 eV. It is indicated that the laser structure, having a single quantum well and 200 nm thick GaInAsP confinement layers, is the best choice for high power operation based on the narrow vertical far-field angle, high efficiency and low loss.

[1] M. Pessa,et al. High-performance 980-nm strained-layer GaInAs-GaInAsP-GaInP quantum-well lasers grown by all solid-source molecular-beam epitaxy , 1996, IEEE Photonics Technology Letters.

[2] L. Coldren,et al. Diode Lasers and Photonic Integrated Circuits , 1995 .

[3] C. Chang-Hasnain,et al. Temperature dependence of light-current characteristics of 0.98-/spl mu/m Al-free strained-quantum-well lasers , 1994, IEEE Photonics Technology Letters.

[4] R. S. Geels,et al. Strained Ga/sub x/In/sub 1-x/P/(AlGa)/sub 0.5/In/sub 0.5/P heterostructures and quantum-well laser diodes , 1994 .

[5] J. Temmyo,et al. Degradation behavior of 0.98-/spl mu/m strained quantum well InGaAs/AlGaAs lasers under high-power operation , 1994 .

[6] M. Pessa,et al. High-power operation of aluminum-free ( kappa =0.98 mu m) pump laser for erbium-doped fiber amplifier , 1993, IEEE Photonics Technology Letters.

[7] G. Zhang,et al. Temperature sensitivity of strained-layer InGaAs/Ga(In)As(P)/GaInP separate-confinement-heterostructure quantum well lasers (λ∼980 nm) , 1993 .