Study of the light emission in Ge layers and strained membranes on Si substrates

The influence of pattern design and tensile strain on light emission was investigated in Ge layers and suspended membranes. The optical properties were examined by micro-photoluminescence and reflectivity. Tensile strain was extracted from micro-Raman spectroscopy. It has been shown that Fabry–Perot interference fringes can dominate the photoluminescence spectra. It is crucial to remove them in order to analyze the photoluminescence changes coming from tensile strain; especially if Fabry–Perot oscillations are in the same energy range compared to the stress-induced spectral shift. This study highlights the fact that this interference must be taken into account in order to examine the strain in suspended Ge layers.

[1]  Jérôme Faist,et al.  Analysis of enhanced light emission from highly strained germanium microbridges , 2013, Nature Photonics.

[2]  Krishna C. Saraswat,et al.  Direct bandgap germanium-on-silicon inferred from 5.7% 〈100〉 uniaxial tensile strain [Invited] , 2014 .

[3]  Yuji Yamamoto,et al.  Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach , 2013 .

[4]  Krishna C. Saraswat,et al.  Roadmap to an Efficient Germanium-on-Silicon Laser: Strain vs. n-Type Doping , 2012, IEEE Photonics Journal.

[5]  J. Faist,et al.  Lasing in direct-bandgap GeSn alloy grown on Si , 2015, Nature Photonics.

[6]  K. Bourdelle,et al.  Power-dependent Raman analysis of highly strained Si nanobridges. , 2014, Nano letters.

[7]  K. Saraswat,et al.  Strained germanium thin film membrane on silicon substrate for optoelectronics. , 2011, Optics express.

[8]  P. Gentile,et al.  Tensile strained germanium nanowires measured by photocurrent spectroscopy and X-ray microdiffraction. , 2015, Nano letters.

[9]  M. Lagally,et al.  Tensilely strained germanium nanomembranes as infrared optical gain media. , 2013, Small.

[10]  Van de Walle Cg Band lineups and deformation potentials in the model-solid theory. , 1989 .

[11]  E. Martincic,et al.  Control of direct band gap emission of bulk germanium by mechanical tensile strain , 2010 .

[12]  G. Fishman,et al.  Band structure and optical gain of tensile-strained germanium based on a 30 band k⋅p formalism , 2010 .

[13]  Fred H. Pollak,et al.  Stress-Induced Shifts of First-Order Raman Frequencies of Diamond- and Zinc-Blende-Type Semiconductors , 1972 .

[14]  Feng Chen,et al.  Direct-bandgap light-emitting germanium in tensilely strained nanomembranes , 2011, Proceedings of the National Academy of Sciences.

[15]  H. Li Refractive index of silicon and germanium and its wavelength and temperature derivatives , 1980 .

[16]  I. Wolf Micro-Raman spectroscopy to study local mechanical stress in silicon integrated circuits , 1996 .

[17]  James S. Harris,et al.  Strong enhancement of direct transition photoluminescence with highly tensile-strained Ge grown by molecular beam epitaxy , 2011 .

[18]  Donguk Nam,et al.  Bandgap-customizable germanium using lithographically determined biaxial tensile strain for silicon-compatible optoelectronics. , 2015, Optics express.