Heterojunction diodes formed using thin-film C containing polycrystalline diamond and Si

Diodelike I-V characteristics measured in Al/C/Si structures formed by depositing thin C films onto Si substrates from a CH/sub 4//Ar plasma are discussed. The films, which contain polycrystalline diamond grains, are 500-1000 A thick. It is shown that the true I-V characteristics can be measured only after removing the fixed interface charge at the metal-C interface. By taking the C to be an intrinsic polycrystalline semiconductor, it is possible to treat the diode characteristics as arising from the presence of a C/Si heterojunction.<<ETX>>

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