Optoelectrical performance evolution of CMOS image sensors exposed to gamma radiation
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[1] Guang Yang,et al. Multi-megarad (Si) radiation-tolerant integrated CMOS imager , 2001, IS&T/SPIE Electronic Imaging.
[2] G. Hopkinson. Radiation effects in a CMOS active pixel sensor , 2000 .
[3] P. Magnan,et al. Total Dose Evaluation of Deep Submicron CMOS Imaging Technology Through Elementary Device and Pixel Array Behavior Analysis , 2008, IEEE Transactions on Nuclear Science.
[4] J. R. Srour,et al. Enhanced displacement damage effectiveness in irradiated silicon devices , 1989 .
[5] B. Dierickx,et al. Total dose and displacement damage effects in a radiation-hardened CMOS APS , 2003 .
[6] Albert J. P. Theuwissen,et al. Degradation of CMOS image sensors in deep-submicron technology due to γ-irradiation , 2008 .
[7] H.J. Barnaby,et al. Total-Ionizing-Dose Effects in Modern CMOS Technologies , 2006, IEEE Transactions on Nuclear Science.
[8] A. Theuwissen,et al. Leakage current modeling of test structures for characterization of dark current in CMOS image sensors , 2003 .
[9] G. Cervelli,et al. Radiation-induced edge effects in deep submicron CMOS transistors , 2005, IEEE Transactions on Nuclear Science.
[10] A. Alvarez-Herrero,et al. Modeling of Absorption Induced by Space Radiation on Glass: A Two-Variable Function Depending on Radiation Dose and Post-Irradiation Time , 2006, IEEE Transactions on Nuclear Science.