UV photodetectors in 6HSiC

Abstract We have fabricated two types of UV photodetector in 6HSiC: UV photodiodes using SiC Schottky-barrier structures; SiC photodiodes using shallow p-n junctions. The monochromatic sensitivity of the Schottky-barrier photodetectors (at a wavelength of 215 nm) is 0.15 A/W, and of the p-n junction photodetectors (at a wavelength of 225 nm) 0.13 A/W.