论文信息 - Recent advances in hot-wire CVD R&D at NREL : From 18% silicon heterojunction cells to silicon epitaxy at glass-compatible temperatures - 字舞流文

Recent advances in hot-wire CVD R&D at NREL : From 18% silicon heterojunction cells to silicon epitaxy at glass-compatible temperatures

H. Branz | D. Young | C. Teplin | Qi Wang | P. Stradins | T. Wang | A. Mahan | Yueqing Xu | E. Iwaniczko | M. Page | L. Roybal | R. Bauer | Q. Wang

[1] Qi Wang,et al. Significant improvement in silicon chemical vapor deposition epitaxy above the surface dehydrogenation temperature , 2006 .

[2] L. Gedvilas,et al. Rapid solid-phase crystallization of high-rate, hot-wire chemical-vapor-deposited hydrogenated amorphous silicon , 2006 .

[3] R. Reedy,et al. Real-Time Optical Spectroscopy Study of Solid-Phase Crystallization in Hydrogenated Amorphous Silicon , 2006 .

[4] D. Levi,et al. Effect of emitter deposition temperature on surface passivation in hot-wire chemical vapor deposited silicon heterojunction solar cells , 2006 .

[5] H. Atwater,et al. Hot-wire CVD-grown epitaxial Si films on Si (100) substrates and a model of epitaxial breakdown , 2006 .

[6] R. Reedy,et al. Low-temperature silicon homoepitaxy by hot-wire chemical vapor deposition with a Ta filament , 2006 .

[7] Makoto Tanaka,et al. Obtaining a higher Voc in HIT cells , 2005 .

[8] D. A. Clugston,et al. Crystalline silicon on glass (CSG) thin-film solar cell modules , 2004 .

[9] L. Gedvilas,et al. Structural properties of hot wire a-Si:H films deposited at rates in excess of 100 /s , 2001 .