论文信息 - A novel RFCMOS process monitoring test structure

A novel RFCMOS process monitoring test structure

A novel RFCMOS process monitoring test structure has been proposed for the first time in this paper. Excellent agreement in DC and RF characteristics has been observed between conventional test structures and the new process monitoring test structure for both n and p MOSFETs of different device dimensions. This new layout approach can be extended to other devices such as MIM capacitors, diodes, MOS varactors and interconnects.

[1] Behzad Razavi. CMOS technology characterization for analog and RF design , 1999 .

[2] Lawrence E. Larson. Integrated circuit technology options for RFICs-present status and future directions , 1998 .

[3] Lawrence E. Larson,et al. Integrated circuit technology options for RFIC's-present status and future directions , 1997, Proceedings of CICC 97 - Custom Integrated Circuits Conference.

[4] E. Vandamme,et al. Improved three-step de-embedding method to accurately account for the influence of pad parasitics in silicon on-wafer RF test-structures , 2001 .