论文信息 - Simulation of magnetotransport in nanoscale devices

Simulation of magnetotransport in nanoscale devices

The Boltzmann equation is solved by a spherical harmonics expansion including a magnetic force perpendicular to the two-dimensional simulation plane in real space. The new approach is used to verify a methodology for extracting the electron minority mobility of SiGe HBTs. Magnetotransport in a silicon n+nn+ device is simulated and a strong impact of the maximum number of spherical harmonics on the simulation result is found.

Sung-Min Hong | C. Jungemann | C. Jungemann | Sung-Min Hong

[1] Christian Ringhofer,et al. A Mixed Spectral-Difference Method for the Steady State Boltzmann-Poisson System , 2003, SIAM J. Numer. Anal..

[2] Geurts,et al. Failure of extended-moment-equation approaches to describe ballistic transport in submicrometer structures. , 1992, Physical review. B, Condensed matter.

[3] Christoph Jungemann,et al. Stable discretization of the Boltzmann equation based on spherical harmonics, box integration, and a maximum entropy dissipation principle , 2006 .

[4] A. Gnudi,et al. Two-dimensional NOSFET Simulation by means of Multidimensional Spherical Harmonics Expansion of the Boltzmann Transport Equation , 1992, ESSDERC '92: 22nd European Solid State Device Research conference.

[5] Carlo Jacoboni,et al. Diffusion coefficient of electrons in silicon , 1981 .

[6] Miss A.O. Penney. (b) , 1974, The New Yale Book of Quotations.

[7] G. G. Stokes. "J." , 1890, The New Yale Book of Quotations.

[8] N. Goldsman,et al. A physics-based analytical/numerical solution to the Boltzmann transport equation for use in device simulation , 1991 .