boost voltage generator of a memory device semiconductor

a) boosting voltage generator of a semiconductor memory device b) The semiconductor memory device is characterized in that it comprises: at least two boosting voltage circuits to perform independently the boost a second power and generating a first power; a plurality of memory cell arrays for introducing the second power as operating power and for storing information therein; and control means connected to the memory cell arrays for supplying the first power to these memory cell arrays, said control means, arranged in two groups, corresponding to the number of the voltage boosting circuit.