Development of radiation hard sensors for very high luminosity colliders—CERN-RD50 project

[1]  C. Kenney,et al.  3D — A proposed new architecture for solid-state radiation detectors , 1997 .

[2]  B. MacEvoy.  Defect evolution in silicon detector material , 1997 .

[3]  Eckhart Fretwurst,et al.  Leakage current of hadron irradiated silicon detectors - material dependence , 1999 .

[4]  K. Runge,et al.  Particle detectors based on semi-insulating silicon carbide , 1999 .

[5]  Giovanni Verzellesi,et al.  Optimization of TMAH etching for MEMS , 1999, Design, Test, Integration, and Packaging of MEMS/MOEMS.

[6]  P. Ciampolini,et al.  Radiation hard silicon detectors—developments by the RD48 (ROSE) collaboration , 2001 .

[7]  P. Ciampolini,et al.  Developments for radiation hard silicon detectors by defect engineering—results by the CERN RD48 (ROSE) Collaboration , 2001 .

[8]  G. Verzellesi,et al.  Investigation on the charge collection properties of a 4H-SiC Schottky diode detector , 2002 .

[9]  C. Viá,et al.  Macroscopic results for a novel oxygenated silicon material , 2002 .

[10]  Marko Zavrtanik,et al.  Effective trapping time of electrons and holes in different silicon materials irradiated with neutrons, protons and pions , 2002 .

[11]  A. Hallén,et al.  Formation of a double acceptor center during divacancy annealing in low-doped high-purity oxygenated Si , 2002 .

[12]  V. Radeka,et al.  Novel prototype Si detector development and processing at BNL , 2002 .

[13]  I. Pintilie,et al.  Close to midgap trapping level in 60Co gamma irradiated silicon detectors , 2002 .

[14]  Mika Huhtinen,et al.  Simulation of non-ionising energy loss and defect formation in silicon , 2002 .

[15]  Michael Moll,et al.  Relation between microscopic defects and macroscopic changes in silicon detector properties after hadron irradiation , 2002 .

[16]  P. Allport,et al.  First results on the charge collection properties of segmented detectors made with p-type bulk silicon , 2002 .

[17]  Recent results on particle detection with epitaxial SiC Schottky diodes , 2002, 2002 IEEE Nuclear Science Symposium Conference Record.

[18]  Keith Mathieson,et al.  Technology development of 3D detectors for high-energy physics and imaging , 2002 .

[19]  I. Pintilie,et al.  Bulk damage effects in standard and oxygen-enriched silicon detectors induced by 60Co-gamma radiation , 2003 .

[20]  Claudio Lanzieri,et al.  Radiation tolerance of epitaxial silicon carbide detectors for electrons, protons and gamma-rays , 2003 .

[21]  V. Eremin,et al.  Paradoxes of steady-state and pulse operational mode characteristics of silicon detectors irradiated by ultra-high doses of γ-rays ☆ , 2003 .

[22]  A. Cavallini,et al.  Electron-Induced Damage Effects in 4H-SiC Schottky Diodes , 2003 .

[23]  L. Bosisio,et al.  Studies of radiation damage by 900 MeV electrons on standard and oxygen enriched silicon devices , 2003 .

[24]  Tao Wang,et al.  Semi-insulating GaN and its evaluation for α particle detection , 2003 .

[25]  G. Lindström,et al.  Radiation damage in silicon detectors , 2003 .

[26]  V. Eremin,et al.  Processing of microstrip detectors on Czochralski grown high resistivity silicon substrates , 2003 .

[27]  M. Bruzzi,et al.  Characterisation of epitaxial SiC Schottky barriers as particle detectors , 2003 .