High-Power Ka-Band Performance of AlInN/GaN HEMT With 9.8-nm-Thin Barrier

We report the first CW Ka-band radio-frequency (RF) power measurements at 35 GHz from a passivated Al<sub>0.82</sub>In<sub>0.18</sub>N/GaN high-electron mobility transistor on SiC with 9.8-nm-thin barrier. This device delivered a maximum of 5.8 W/mm with a power-added efficiency of 43.6% biased at V<sub>DS</sub> = 20 V and 10% I<sub>DSS</sub> when matched for power at CW. The device was grown by metal-organic chemical vapor deposition with 2.8-¿m source-drain spacing and a gate length of 160 nm. An excellent ohmic contact was obtained with an R<sub>c</sub> of 0.62 ¿·mm. The maximum extrinsic transconductance was 354 mS/mm with an I<sub>DSS</sub> of 1197 mA/mm at a V<sub>GS</sub> of 0 V, an ft of 79 GHz, and an f<sub>max</sub> of 113.8 GHz.

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