论文信息 - In-situ doping of silicon using the gas immersion laser doping (GILD) process

In-situ doping of silicon using the gas immersion laser doping (GILD) process

Abstract In this work we use built in diagnostic capabilities to demonstrate gas immersion laser doping (GILD) as an in-situ doping technique. A HeNe laser reflectivity apparatus measures the silicon melt time during doping, and our melt depth/diffusion simulation program, LASERMELT, is used to predict the silicon melt depth versus melt time. By combining these tools along with previously measured SIMS and RBS profiles, we obtain an accurate in-situ method of determining junction depths. LASERMELT also calculates the sheet resistance and the dopant profiles themselves. The ability to successfully determine these parameters in-situ, as well as fabricate ultra shallow junctions in a ‘low temperature’ environment makes laser doping suitable for future ULSI processes.

Thomas W. Sigmon | P. G. Carey

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