Estimation method for turn-off collector voltage of IGBTs using emitter-auxiliary inductor

This paper presents a method for estimating the instantaneous turn-off collector voltage of high-power IGBT modules. Because of the parasitic inductors in circuit, the fast turn-off collector current usually leads to a voltage overshoot on IGBT modules during the turn-off transition. In terms of high-voltage and high-power IGBT module, there exists an emitter-auxiliary inductor between the power emitter and Kelvin emitter. The same variable dic/dt during turn-off transition will also induce a measurable voltage veE across the emitter-auxiliary inductor LeE. As a result, the hazardous turn-off peak collector voltage can be reflected by the induced νeE in the case of fixed commutation loop inductors and emitter auxiliary inductor. Finally, a double pulse test platform is used to validate the effectiveness of estimation method. The estimation curves of turn-off collector voltage are in accordance with the experimental results.

[1]  Harald Kuhn,et al.  Digital adaptive driving strategies for high-voltage IGBTs , 2011, 2011 IEEE Energy Conversion Congress and Exposition.

[2]  Liqing Lu,et al.  Physics-Based Model of Planar-Gate IGBT Including MOS Side Two-Dimensional Effects , 2010, IEEE Transactions on Industry Applications.

[3]  Thomas Guillod,et al.  Gate Unit With Improved Short-Circuit Detection and Turn-Off Capability for 4.5-kV Press-Pack IGBTs Operated at 4-kA Pulse Current , 2013, IEEE Transactions on Plasma Science.

[4]  Jerry L. Hudgins,et al.  Circuit simulator models for the diode and IGBT with full temperature dependent features , 2001, 2001 IEEE 32nd Annual Power Electronics Specialists Conference (IEEE Cat. No.01CH37230).

[5]  K. Fink,et al.  Advanced Gate Drive Unit With Closed-Loop $di_{{C}}/dt$ Control , 2013, IEEE Transactions on Power Electronics.

[6]  Pengfei Sun,et al.  Junction Temperature Extraction Approach With Turn-Off Delay Time for High-Voltage High-Power IGBT Modules , 2016, IEEE Transactions on Power Electronics.

[7]  Steffen Bernet,et al.  The Investigation of a 6.5-kV, 1-kA SiC Diode Module for Medium Voltage Converters , 2014, IEEE Transactions on Power Electronics.

[8]  Maryam Saeedifard,et al.  Operation, Control, and Applications of the Modular Multilevel Converter: A Review , 2015, IEEE Transactions on Power Electronics.

[9]  Martin Wagner,et al.  Static balancing of the collector current of IGBTs connected in parallel , 2014, IECON 2014 - 40th Annual Conference of the IEEE Industrial Electronics Society.

[10]  J. Kolar,et al.  Closed-Loop di/dt and dv/dt IGBT Gate Driver , 2015 .

[11]  Leon M. Tolbert,et al.  A di/dt Feedback-Based Active Gate Driver for Smart Switching and Fast Overcurrent Protection of IGBT Modules , 2014, IEEE Transactions on Power Electronics.

[12]  L. Ran,et al.  Investigation Into IGBT dV/dt During Turn-Off and Its Temperature Dependence , 2011, IEEE Transactions on Power Electronics.

[13]  Frede Blaabjerg,et al.  Transitioning to Physics-of-Failure as a Reliability Driver in Power Electronics , 2014, IEEE Journal of Emerging and Selected Topics in Power Electronics.

[14]  Wuhua Li,et al.  Online High-Power P-i-N Diode Chip Temperature Extraction and Prediction Method With Maximum Recovery Current di/dt , 2015, IEEE Transactions on Power Electronics.

[15]  Ke Ma.  Thermal " Loading " and " Lifetime " Estimation " for " Power " Device " Considering " Mission " Profiles " in " Wind " Power " Converter " , 2014 .

[16]  J. Peralta,et al.  Detailed and Averaged Models for a 401-Level MMC–HVDC System , 2012, IEEE Transactions on Power Delivery.

[17]  Johann W. Kolar,et al.  Closed-Loop d ${\bm i}/$ d ${\bm t}$ and d ${\bm v}/$ d ${\bm t}$ IGBT Gate Driver , 2015 .