论文信息 - The switching behaviors of submicron magnetic tunnel junctions with synthetic antiferromagnetic free layers

The switching behaviors of submicron magnetic tunnel junctions with synthetic antiferromagnetic free layers

The switching behaviors in elliptic shaped (aspect ratio=2) submicron magnetic tunnel junctions using CoFeB single free layer and CoFeB∕Ru∕CoFeB synthetic antiferromagnetic (SAF) free layers are studied. It is found that under considerable stray fields originating from pinned layers, junctions with single free layer show complex switching behaviors with larger Hc variations. In contrast, junctions with SAF free layers exhibit kink-free R‐H loops and less Hc variations. The Hc of junctions with SAF free layers is less dependent on the junction size than that with a single free layer. Furthermore, for junctions smaller than a critical size the SAF free layers have a smaller Hc than single free layers.

[1] N. Tezuka,et al. Magnetic domain structures and switching properties in submicron size synthetic antiferromagnets , 2004 .

[2] Koichiro Inomata,et al. Magnetic switching properties of magnetic tunnel junctions using a synthetic ferrimagnet free layer , 2004 .

[3] Koichiro Inomata,et al. Magnetic switching field and giant magnetoresistance effect of multilayers with synthetic antiferromagnet free layers , 2002 .

[4] P. Freitas,et al. Synthetic ferrimagnet free layer tunnel junction for magnetic random access memories , 2002 .

[5] N. Tezuka,et al. Switching field behavior in antiparallely coupled sub-micrometer scale magnetic elements , 2002 .

[6] Saied N. Tehrani,et al. Recent developments in magnetic tunnel junction MRAM , 2000 .

[7] S. Tehrani,et al. End Domain States and Magnetization Reversal in Submicron Magnetic Structures , 1998, 7th Joint MMM-Intermag Conference. Abstracts (Cat. No.98CH36275).