Kinetic energy dependence of N+ and N2+ reactions with Si(100)

Abstract Reactions of N + and N 2 + ions with a Si(100) surface are investigated in the kinetic energy range 1–25 eV. The Si surface is exposed to low energy beams of these ions in an ultrahigh vacuum ion-surface collision chamber, and the reacted surface is analyzed using Auger electron spectroscopy and ultraviolet photoelectron spectroscopy. The N + reaction leads to efficient silicon nitride formation, its reaction probability P r (N + ) being ∼ 0.25 at all energies. The N 2 + reaction efficiency changes with e P r (N 2 + ) increasing from zero to ∼ 0.25 in this energy range. The energy dependence of P r is explained in terms of eleme reaction steps such as ion neutralization, collisional dissociation of N 2 + , and Si-N bond formation.

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