论文信息 - DISTRIBUTED GaAs FET CIRCUIT MODELFOR BROADBAND AND MILLIMETER WAVEAPPLICATIONS

DISTRIBUTED GaAs FET CIRCUIT MODELFOR BROADBAND AND MILLIMETER WAVEAPPLICATIONS

paper, the Z-parameters of a fully equivalent circuit MESFETmodel are presented as simple, closed-form expressions. The benefit of this new model is to extend the frequency range of accurate, predicted device performance beyond that of a simple lumped element model . Comparison with the simpler circuit model shows differences at frequencies beyond 18 GHz for a 285-micron x 0.5-micron GaAs MESFET.

C. Yuen | G. Zdasiuk | R. LaRue

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