Comparative study of InN growth on Ga- and N-polarity GaN templates by molecular-beam epitaxy
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B. Cao | Ke Xu | A. Yoshikawa | W. Terashima | Y. Ishitani | M. Yoshitani | N. Hashimoto | T. Hata
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B. Cao | Ke Xu | A. Yoshikawa | W. Terashima | Y. Ishitani | M. Yoshitani | N. Hashimoto | T. Hata