Symmetric charge-flux nonlinearity with combined inherently-asymmetric memristors

An ideal memristor with single-valued odd-symmetric charge-flux nonlinearity is extensively proposed for chaos-based applications. However, according to our boundary condition-based memristor model, the nonlinearity of a memristor nano-structure is in general multi-valued with strong dependence on input and initial conditions. Nevertheless, provided the model is augmented with suitable boundary conditions, it is possible to conceive a memristor with single-valued asymmetric nonlinearity. The required symmetry property is then featured by appropriate combinations of memristors with opposite material order.