论文信息 - Al0.95Ga0.05As0.56Sb0.44 for lateral oxide-confinement layer in InP-based devices - 字舞流文

Al0.95Ga0.05As0.56Sb0.44 for lateral oxide-confinement layer in InP-based devices

L. Coldren | D. Feezell | D. Buell | D. Lofgreen | T. Asano | R. Koda | A. Huntington | M.H.M. Reddy