论文信息 - Fabrication of p–i–n devices consisting of ZnO quantum dots embedded in Ga2ZnO4 film - 字舞流文

Fabrication of p–i–n devices consisting of ZnO quantum dots embedded in Ga2ZnO4 film

Xinyu Zhang | Y. Tomita | Kenkichiro Kobayashi | Y. Maeda | S. Matsushima | Y. Kohno