Investigating printability of native defects on EUV mask blanks through simulations and experiments
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Jenah Harris-Jones | Vibhu Jindal | Henry Herbol | Gregory Denbeaux | Il-Yong Jang | Mihir Upadhyaya | Hyuk Joo Kwon
[1] Jeffrey Bokor,et al. Minimum critical defects in extreme-ultraviolet lithography masks , 1997 .
[2] Jenah Harris-Jones,et al. Smoothing of substrate pits using ion beam deposition for EUV lithography , 2012, Advanced Lithography.
[3] D. Stearns,et al. Practical approach for modeling extreme ultraviolet lithography mask defects , 2002 .
[4] Michael Lercel,et al. SEMATECH's EUV program: a key enabler for EUVL introduction , 2007, SPIE Advanced Lithography.
[5] John Arnold,et al. EUV lithography at the 22nm technology node , 2010, Advanced Lithography.
[6] Akira Chiba,et al. Characteristics of the Ru buffer layer for EUVL mask patterning , 2001, SPIE Advanced Lithography.
[7] Jenah Harris-Jones,et al. Modeling the EUV multilayer deposition process on EUV blanks , 2011, Advanced Lithography.
[8] Donald W. Sweeney,et al. A practical approach for modeling EUVL mask defects , 2001 .
[9] E. Spiller,et al. Localized defects in multilayer coatings , 2004 .
[10] John Arnold,et al. The use of EUV lithography to produce demonstration devices , 2008, SPIE Advanced Lithography.
[11] Paul B. Mirkarimi,et al. Progress in the fabrication of low-defect density mask blanks for extreme ultraviolet lithography , 2006 .
[12] Paul B. Mirkarimi,et al. Investigating the growth of localized defects in thin films using gold nanospheres , 2000 .