论文信息 - An IGBT gate driver integrated circuit with full-bridge output stage and short circuit protections

An IGBT gate driver integrated circuit with full-bridge output stage and short circuit protections

This paper presents a monolithic IGBT gate driver design with an original full-bridge topology output stage, implemented with high voltage LDMOSFETS (36-160V/1A) for power integrated circuits using standard low cost 2.5/spl square/m CMOS technology and oriented for digital applications. Short circuit protections have been also integrated. The full-bridge topology allows obtaining positive and negative gate voltages using a single floating power supply and the implementation of a soft shutdown process following a short circuit fault can be easily reached.

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