Elemental Topological Dirac Semimetal α‐Sn with High Quantum Mobility (Adv. Mater. 51/2021)

In article number 2104645, Le Duc Anh, Masaaki Tanaka, and co-workers report the epitaxial growth of elemental topological Dirac semimetal α-Sn with the highest quality thus far. The very high quantum mobilities in these samples allow a quantitative characterization of the nontrivial interfacial and bulk band structure of α-Sn via quantum transport in combination with first-principles calculations. The results establish α-Sn as an excellent model system to study novel topological phases and device applications.