论文信息 - Franz-Keldysh Effect in InP

Franz-Keldysh Effect in InP

Measurements of the Franz-Keldysh effect (electroabsorption) taken with a diode in InP are reported. Starting from the known doping profile, the optical absorption and ionization data as well as the measured electron diffusion lengths the Franz-Keldysh effect is calculated. The results agree well with the measurements with the exception of the largest reverse-voltage value where the influence of a step in the doping profile is noticeable.

A. Schlachetzki | A. Schlachetzki | S. Aytac | S. Aytaç

[1] B. Miller,et al. Variation of minority-carrier diffusion length with carrier concentration in GaAs liquid-phase epitaxial layers , 1973 .

[2] E. Kuphal,et al. Optical properties of In1−xGaxP1−yAsy, InP, GaAs, and GaP determined by ellipsometry , 1982 .

[3] S. Groves,et al. TP-C14 ionization coefficients of electrons and holes in InP , 1979, IEEE Transactions on Electron Devices.

[4] R. M. Warner,et al. Diffused junction depletion layer calculations , 1960 .

[5] C. A. Burrus,et al. Dark current and breakdown characteristics of dislocation‐free InP photodiodes , 1980 .

[6] John B. Shoven,et al. I , Edinburgh Medical and Surgical Journal.

[7] A. Schlachetzki,et al. Diffusion-profile measurement in InP with Schottky diodes , 1982 .