Thermal evaluation of GaN-based HEMTs with various layer sizes and structural parameters using finite-element thermal simulation

[1]  Jun-Fa Mao,et al.  Investigating a Thermal Breakdown Model and Experiments on a Silicon-Based Low-Noise Amplifier Under High-Power Microwave Pulses , 2016, IEEE Transactions on Electromagnetic Compatibility.

[2]  Bing Deng,et al.  Two-dimensional transient simulations of the self-heating effects in GaN-based HEMTs , 2013, Microelectron. Reliab..

[3]  S. Bose.  Thermal conductivity evaluation of GaN–AlN–(4H)SiC hetero-epitaxial material system , 2013 .

[4]  Miao Zhao,et al.  Thermal analysis of AlGaN/GaN High-Electron-Mobility Transistors by Infrared Microscopy , 2012, 2012 19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits.

[5]  Stephen J. Pearton,et al.  Finite-element simulations of the effect of device design on channel temperature for AlGaN/GaN high electron mobility transistors , 2011 .

[6]  T. Martin,et al.  Time-dependent thermal crosstalk in multifinger AlGaN/GaN HEMTs and implications on their electrical performance , 2011 .

[7]  W. E. Hoke,et al.  AlGaN/GaN HEMT With 300-GHz $f_{\max}$ , 2010 .

[8]  Ali M. Darwish,et al.  Closed form expression for thermal resistance of a FET structure , 2009, 2009 IEEE Radar Conference.

[9]  F. Bertoluzza,et al.  Three-dimensional finite-element thermal simulation of GaN-based HEMTs , 2009, Microelectron. Reliab..

[10]  T. Egawa,et al.  Breakdown Enhancement of AlGaN/GaN HEMTs on 4-in Silicon by Improving the GaN Quality on Thick Buffer Layers , 2009, IEEE Electron Device Letters.

[11]  Weida Hu,et al.  Two-dimensional transient simulations of drain lag and current collapse in GaN-based high-electron-mobility transistors , 2009 .

[12]  Syed K. Islam,et al.  Temperature dependent analytical model for current-voltage characteristics of AlGaN/GaN power HEMT , 2009 .

[13]  N. Klein,et al.  AlGaN/GaN High Electron Mobility Transistor Structures: Self-Heating Effect and Performance Degradation , 2008, IEEE Transactions on Device and Materials Reliability.

[14]  A. Crespo,et al.  Electro-thermal modeling of multifinger AlGaN/GaN HEMT device operation including thermal substrate effects , 2008, Microelectron. Reliab..

[15]  A. Crespo,et al.  Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices , 2007, IEEE Transactions on Electron Devices.

[16]  M. Kuball,et al.  Time-Resolved Temperature Measurement of AlGaN/GaN Electronic Devices Using Micro-Raman Spectroscopy , 2007, IEEE Electron Device Letters.

[17]  M. Germain,et al.  Improved Thermal Performance of AlGaN/GaN HEMTs by an Optimized Flip-Chip Design , 2006, IEEE Transactions on Electron Devices.

[18]  Toshiaki Matsui,et al.  30-nm-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with a Current-Gain Cutoff Frequency of 181 GHz , 2006 .

[19]  Weida Hu,et al.  Self-heating simulation of GaN-based metal-oxide-semiconductor high-electron-mobility transistors including hot electron and quantum effects , 2006 .

[20]  Hangfeng Ji,et al.  Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures , 2006, IEEE Transactions on Electron Devices.

[21]  Alexander A. Balandin,et al.  Electrothermal simulation of the self-heating effects in GaN-based field-effect transistors , 2006 .

[22]  M. Uren,et al.  Measurements of unity gain cutoff frequency and saturation velocity of a GaN HEMT transistor , 2005, IEEE Transactions on Electron Devices.

[23]  R. Mickevicius,et al.  Simulation of hot electron and quantum effects in AlGaN/GaN heterostructure field effect transistors , 2004 .

[24]  S.S. Islam,et al.  Self-heating and trapping effects on the RF performance of GaN MESFETs , 2004, IEEE Transactions on Microwave Theory and Techniques.

[25]  U. Mishra,et al.  30-W/mm GaN HEMTs by field plate optimization , 2004, IEEE Electron Device Letters.

[26]  Takashi Jimbo,et al.  Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride , 2004 .

[27]  C.C. Lee,et al.  Thermal modeling and measurement of GaN-based HFET devices , 2003, IEEE Electron Device Letters.

[28]  Martin Kuball,et al.  Measurement of temperature distribution in multifinger AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy , 2003 .

[29]  P. Kordos,et al.  AlGaN/GaN HEMTs on silicon substrates with f/sub T/ of 32/20 GHz and f/sub max/ of 27/22 GHz for 0.5/0.7 /spl mu/m gate length , 2002 .

[30]  R. Coffie,et al.  AlGaN/AlN/GaN high-power microwave HEMT , 2001, IEEE Electron Device Letters.

[31]  Lester F. Eastman,et al.  Undoped AlGaN/GaN HEMTs for microwave power amplification , 2001 .

[32]  D. Clarke,et al.  CRACKING OF GaN FILMS , 2001 .

[33]  Ian K. Robinson,et al.  Critical thickness of GaN thin films on sapphire (0001) , 1996 .

[34]  L. B. Freund,et al.  A critical thickness condition for a strained compliant substrate/epitaxial film system , 1996 .

[35]  I. De Wolf,et al.  Stresses and strains in lattice‐mismatched stripes, quantum wires, quantum dots, and substrates in Si technology , 1996 .

[36]  G. L. Christenson,et al.  Overcoming the pseudomorphic critical thickness limit using compliant substrates , 1994 .

[37]  A. Ferris-Prabhu.  An algebraic expression to count the number of chips on a wafer , 1989, IEEE Circuits and Devices Magazine.

[38]  Ephraim Suhir,et al.  New approach to the high quality epitaxial growth of lattice‐mismatched materials , 1986 .

[39]  M. Pinar Mengüç,et al.  Thermal Radiation Heat Transfer , 2020 .