Impact of simulation parameters on critical area analysis

Monte Carlo critical area extraction routines are controlled by a number of parameters that impact the accuracy and speed of the simulation. In this paper, the effects of the following parameters are explored experimentally: defect shape, rounding of corners in the layout, merging of redundant contacts, consideration of the netlist extracted from layout, and varying the number of defects simulated.

[1]  L. Milor,et al.  Yield modeling based on in-line scanner defect sizing and a circuit's critical area , 1999 .

[2]  G. O'Donoghue,et al.  A comparison of critical area analysis tools [IC yield] , 1998, IEEE/SEMI 1998 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop (Cat. No.98CH36168).

[3]  Gerard A. Allan A comparison of efficient dot throwing and shape shifting extra material critical area estimation , 1998, Proceedings 1998 IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems (Cat. No.98EX223).

[4]  R. Mangaser,et al.  BEOL yield predictions for SIA roadmap , 1997, 1997 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop ASMC 97 Proceedings.

[5]  C.H. Stapper,et al.  Integrated circuit yield statistics , 1983, Proceedings of the IEEE.