High efficiency tunneling-regenerated multi-active region light-emitting diodes

A new mechanism of tunneling-regenerated multi-active region LEDs with high quantum efficiency and high brightness has been presented. The layer structure, MOCVD growth, device technology, a several of measured curves and their analysis of these new mechanism LEDs were shown in the paper. It was theoretically and experimentally resulted in that efficiency of the electro-luminescence and the on-axis luminous intensity can linearly increase approximately with the number of active regions.