Integration of a resonant‐tunneling structure with a metal‐semiconductor field‐effect transistor

We report experimental realization of a three‐terminal negative differential resistance (NDR) device. The device consists of a GaAs‐AlxGa1−xAs double‐barrier tunneling heterostructure in series with a recessed‐gate metal‐semiconductor field‐effect transistor on a semi‐insulating substrate. Basic dc characteristics for three samples grown by metalorganic chemical vapor deposition are shown. All samples exhibit NDR at 77 K, with peak‐to‐valley current ratios between 2 and 7. Current densities at the peak of the NDR range from 0.5 to 380 A/cm2. The peak‐to‐valley current ratio and the voltage location of the NDR can be modulated with gate bias.

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