Modeling and power loss evaluation of ultra wide band gap Ga2O3 device for high power applications

In this paper, the properties and performance evaluation of a novel ultra wide band gap device using Ga<inf>2</inf>O<inf>3</inf> material is presented. Although Ga<inf>2</inf>O<inf>3</inf> device is currently at its early development stage, the material and existing devices have shown tremendous potential in high power applications. The properties of Ga<inf>2</inf>O<inf>3</inf> based on both theoretical limits and state-of-the-art prototypes for high power applications are discussed. TCAD and SPICE models are used to extract device parameters and to characterize static and switching performances. A three phase modular multilevel converter model is then established to calculate power losses at different operating conditions. Quantitative comparison between Ga<inf>2</inf>O<inf>3</inf> and SiC devices is presented.

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