A simple subcircuit extension of the BSIM3v3 model for CMOS RF design

An accurate and simple lumped-element extension of the BSIM3v3 MOSFET model for small-signal radio-frequency circuit simulation is proposed and investigated. Detailed comparisons of the small-signal y and s parameters with both two-dimensional device simulations and measurement data are presented. A procedure is developed to extract the values of two lumped resistors-the only added elements. The non-quasi-static and substrate effects can be modeled with these two resistors to significantly improve the model accuracy up to a frequency of 10 GHz, which is about 70% of the f/sub T/ of the 0.5 /spl mu/m NMOS transistor.

[1]  Mansun Chan,et al.  A robust and physical BSIM3 non-quasi-static transient and AC small-signal model for circuit simulation , 1998 .

[2]  R.P. Jindal.  Noise associated with distributed resistance of MOSFET gate structures in integrated circuits , 1984, IEEE Transactions on Electron Devices.

[3]  Hong June Park,et al.  A non-quasi-static MOSFET model for SPICE-AC analysis , 1992, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[4]  Willy M. C. Sansen,et al.  Modeling of the MOS transistor for high frequency analog design , 1989, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[5]  Kartikeya Mayaram,et al.  Comments on "A small-signal MOSFET model for radio frequency IC applications" , 1998, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[6]  K. F. Lee,et al.  Impact of distributed gate resistance on the performance of MOS devices , 1994 .

[7]  T. Smedes,et al.  An analytical model for the non-quasi-static small-signal behaviour of submicron MOSFETs , 1995 .

[8]  R. Gharpurey,et al.  RF MOSFET modeling accounting for distributed substrate and channel resistances with emphasis on the BSIM3v3 SPICE model , 1997, International Electron Devices Meeting. IEDM Technical Digest.

[9]  R.P. Jindal.  Distributed substrate resistance noise in fine-line NMOS field-effect transistors , 1985, IEEE Transactions on Electron Devices.

[10]  P. Bendix,et al.  Extraction of high-frequency equivalent circuit parameters of submicron gate-length MOSFET's , 1998 .

[11]  C. Turchetti,et al.  A CAD-oriented non-quasi-static approach for the transient analysis of MOS ICs , 1986 .

[12]  G. Asmanis,et al.  Substrate-induced high-frequency noise in deep sub-micron MOSFETs for RF applications , 1999, Proceedings of the IEEE 1999 Custom Integrated Circuits Conference (Cat. No.99CH36327).

[13]  Kartikeya Mayaram,et al.  BSIM3 MOSFET model accuracy for RF circuit simulation , 1998, Proceedings RAWCON 98. 1998 IEEE Radio and Wireless Conference (Cat. No.98EX194).

[14]  K. Suyama,et al.  MOSFET modeling for analog circuit CAD: Problems and prospects , 1993, Proceedings of IEEE Custom Integrated Circuits Conference - CICC '93.

[15]  Eyad Abou-Allam,et al.  A small-signal MOSFET model for radio frequency IC applications , 1997, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[16]  R. Culbertson,et al.  A physical large signal Si MOSFET model for RF circuit design , 1997, 1997 IEEE MTT-S International Microwave Symposium Digest.

[17]  D. J. Allstot,et al.  Computer-aided design considerations for mixed-signal coupling in RF integrated circuits , 1998 .

[18]  Paul R. Gray,et al.  CMOS RF modeling for GHz communication IC's , 1998, 1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216).

[19]  Y. Tsividis.  Operation and modeling of the MOS transistor , 1987 .

[20]  Martin L. Schmatz,et al.  A nonlinear microwave MOSFET model for SPICE simulators , 1998 .

[21]  B.A.A. Antao.  Trends in CAD of analog ICs , 1996 .

[22]  T. Manku,et al.  Microwave CMOS-device physics and design , 1999, IEEE J. Solid State Circuits.

[23]  Yi-Jen Chan,et al.  Characteristics of deep-submicrometer MOSFET and its empirical nonlinear RF model , 1998 .

[24]  S. H. Jen,et al.  Accurate modeling and parameter extraction for MOS transistors valid up to 10 GHz , 1999 .

[25]  J. J. Paulos,et al.  Unified nonquasi-static modeling of the long-channel four-terminal MOSFET for large- and small-signal analyses , 1989 .

[26]  Hong June Park,et al.  A charge conserving non-quasi-state (NQS) MOSFET model for SPICE transient analysis , 1991, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[27]  M.J. Deen,et al.  An effective gate resistance model for CMOS RF and noise modeling , 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

[28]  W. Liu,et al.  A CAD-compatible non-quasi-static MOSFET model , 1996, International Electron Devices Meeting. Technical Digest.

[29]  Y. Tsividis,et al.  A small signal dc-to-high-frequency nonquasistatic model for the four-terminal MOSFET valid in all regions of operation , 1985, IEEE Transactions on Electron Devices.

[30]  Andre Juge,et al.  An investigation into the nonquasistatic effects in MOS devices with on-wafer S-parameter techniques , 1993, ICMTS 93 Proceedings of the 1993 International Conference on Microelectronic Test Structures.

[31]  H.-J. Park,et al.  A nonquasi-static MOSFET model for SPICE-transient analysis , 1989 .

[32]  Emmanuel Dubois,et al.  Efficient non-quasi-static MOSFETs model for circuit simulation , 1995, Proceedings of International Electron Devices Meeting.

[33]  Mau-Chung Frank Chang,et al.  High-frequency application of MOS compact models and their development for scalable RF model libraries , 1998, Proceedings of the IEEE 1998 Custom Integrated Circuits Conference (Cat. No.98CH36143).