论文信息 - 20 GHZ HIGH PERFORMANCE PLANAR SI/INGAAS P-I-N PHOTODETECTOR

20 GHZ HIGH PERFORMANCE PLANAR SI/INGAAS P-I-N PHOTODETECTOR

Planar Si/InGaAs wafer fused p-i-n photodetectors were fabricated and measured. They show high internal quantum efficiency, high speed, record low dark current, and no evidence of charge trapping, recombination centers, or a bandgap discontinuity at the heterointerface.

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