Silicon nitride films deposited by Hg-photosensitization chemical vapor deposition
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M. Lemiti | J. Dupuy | B. Balland | S. Audisio | B. Balland
[1] T. Fuyuki,et al. Modeling and diagnostics of silicon nitride deposition from 254‐nm Hg photosensitization of SiH4‐NH3 mixtures: Luminescence of HgNH3 excimer and laser‐induced fluorescence of NH2(Ã 2A1) , 1990 .
[2] M. Lemiti,et al. Thermally Stimulated Current Properties of Alkaline Ions in CVD Si3 N 4 , 1990 .
[3] L. Thanh,et al. Properties of thin oxide-nitride-oxide stacked films , 1988 .
[4] S. Komiya,et al. Photo-Ionizalion Assisted Photo-CVD of Silicon Nitride Film by Microwave-Excited Deuterium Lamp , 1986 .
[5] R. Padmanabhan,et al. Photochemical vapor deposition of silicon nitride films , 1986 .
[6] K. Yamazaki,et al. Structural and Electrical Properies of Photo-CVD Silicon Nitride Film , 1984 .
[7] Y. Numasawa,et al. Photo-Chemical Vapor Deposition of Silicon Nitride Film by Direct Photolysis , 1983 .
[8] F. Habraken,et al. Characterization of Plasma Silicon Nitride Layers , 1983 .
[9] William A. Lanford,et al. Hydrogen content of a variety of plasma‐deposited silicon nitrides , 1982 .
[10] S. Mirsch,et al. Properties of silicon nitride and silicon oxynitride films prepared by reactive sputtering , 1974 .
[11] J. Perrin,et al. Modelling of silicon nitride deposition by 254 nm Hg-photosensitization and 185 nm photolysis of SiH4/NH3 gas mixture , 1989 .
[12] M. Collet. Depositing Silicon Nitride Layers at Low Temperature Using a Photochemical Reaction , 1969 .