Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile

Three-layer staggered InGaN quantum wells (QWs) light-emitting diodes (LEDs) emitting at 520–525 nm were grown by metal-organic chemical vapor deposition by employing graded growth-temperature profile. The use of staggered InGaN QW, with improved electron-hole wave functions overlap design, leads to an enhancement of its radiative recombination rate. Both cathodoluminescence and electroluminescence measurements of three-layer staggered InGaN QW LED exhibited enhancements by 1.8–2.8 and 2.0–3.5 times, respectively, over those of conventional InGaN QW LED.

[1]  Yik-Khoon Ee,et al.  Self-Consistent Analysis of Strain-Compensated InGaN–AlGaN Quantum Wells for Lasers and Light-Emitting Diodes , 2009, IEEE Journal of Quantum Electronics.

[2]  Hisashi Yamada,et al.  Continuous-wave Operation of AlGaN-cladding-free Nonpolar m-Plane InGaN/GaN Laser Diodes , 2007 .

[3]  Ronald A. Arif,et al.  Self-consistent gain analysis of type-II ‘W’ InGaN–GaNAs quantum well lasers , 2008 .

[4]  Shun Lien Chuang,et al.  k.p method for strained wurtzite semiconductors , 1996 .

[5]  Ronald A. Arif,et al.  Type-II InGaN-GaNAs quantum wells for lasers applications , 2008 .

[6]  E. F. Schubert,et al.  Efficiency of GaN/InGaN light-emitting diodes with interdigitated mesa geometry , 2001 .

[7]  Shun Lien Chuang,et al.  A band-structure model of strained quantum-well wurtzite semiconductors , 1997 .

[8]  Yik-Khoon Ee,et al.  Spontaneous Emission and Characteristics of Staggered InGaN Quantum-Well Light-Emitting Diodes , 2008, IEEE Journal of Quantum Electronics.

[9]  Euijoon Yoon,et al.  Optical gain in InGaN∕GaN quantum well structures with embedded AlGaN δ layer , 2007 .

[10]  Yoichi Kawakami,et al.  Photoluminescence property of InGaN single quantum well with embedded AlGaN δ layer , 2006 .

[11]  Ronald A. Arif,et al.  Enhancement of light extraction efficiency of InGaN quantum wells light emitting diodes using Si O 2 /polystyrene microlens arrays , 2007 .

[12]  Ronald A. Arif,et al.  Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes , 2007 .

[13]  S. Nakamura,et al.  InGaN-Based Multi-Quantum-Well-Structure Laser Diodes , 1996 .

[14]  Seoung-Hwan Park,et al.  High-efficiency staggered 530 nm InGaN/InGaN/GaN quantum-well light-emitting diodes , 2009 .

[15]  Ronald A. Arif,et al.  Optical gain analysis of strain-compensated InGaN–AlGaN quantum well active regions for lasers emitting at 420–500 nm , 2008, 2007 International Conference on Numerical Simulation of Optoelectronic Devices.

[16]  Hongping Zhao,et al.  Design Analysis of Staggered InGaN Quantum Wells Light-Emitting Diodes at 500–540 nm , 2009, IEEE Journal of Selected Topics in Quantum Electronics.

[17]  Michael S. Shur,et al.  Enhanced Luminescence in InGaN Multiple Quantum Wells with Quaternary AlInGaN Barriers , 2000 .