A practical small-signal equivalent circuit model for RF-MOSFETs valid up to the cut-off frequency

The non-quasistatic contribution to the Y-parameters is shown to be much smaller than usually expected. This is especially true for advanced pocket-implant MOSFET technologies being developed for RF devices. Therefore, a simple and practical equivalent-circuit model valid up to the cut-off frequency becomes possible. The small interdependence of the different model elements allows an explicit and sequential extraction of the individual element values.