论文信息 - Noise in carbon nanotube field effect transistor

Noise in carbon nanotube field effect transistor

Low frequency noise power spectrum density of carbon nanotubes is presented. It is shown that the input-referred noise of carbon nanotubes increases quadratically as gate voltage is overdriven, suggesting that mobility fluctuation is the dominant mechanism contributing to the noise in carbon nanotube field effect transistors. The comparison of source-drain current noise power spectrum densities of carbon nanotubes in air and in vacuum indicates that a part of device noise is due to charge fluctuations from attached air molecules.

[1] P. Avouris,et al. Self-aligned carbon nanotube transistors with charge transfer doping , 2005, cond-mat/0511039.

[2] Zettl,et al. Extreme oxygen sensitivity of electronic properties of carbon nanotubes , 2000, Science.

[3] Point contact 1/f noise in glassy metal ribbons , 1988 .

[4] A. Evans,et al. Shallow defects responsible for GR noise in MOSFETs , 1991 .

[5] F. Hooge. 1/ƒ noise is no surface effect , 1969 .

[6] E. Snow,et al. 1∕f noise in single-walled carbon nanotube devices , 2004 .

[7] M. Lundstrom,et al. Ballistic carbon nanotube field-effect transistors , 2003, Nature.

[8] H. Fu,et al. Theory and experiments on surface 1/f noise , 1972 .

[9] Richard Martel,et al. Controlling doping and carrier injection in carbon nanotube transistors , 2002 .

[10] Fei Liu,et al. Giant random telegraph signals in the carbon nanotubes as a single defect probe , 2005 .

[11] Philip G. Collins,et al. 1/f noise in carbon nanotubes , 2000 .

[12] Kong,et al. Nanotube molecular wires as chemical sensors , 2000, Science.