Transient latchup characteristics in n-well CMOS

Transient latchup characteristics in scaled n-well CMOS triggered by pulsewidths less than 10 ns are presented by experiments and two-dimensional device simulations. Vibratile increasing latchup currents predicted by the simulations are experimentally observed for the devices with the n/sup +/-p/sup +/ spacing L longer than 8 mu m, and twin-peaks curves in supply currents just before latchup turn-on are also measured. Those experimental results are in relatively good agreement with the simulations triggered by a trapezoidal pulse. It is also reported that CMOS latchup susceptibilities to narrow trigger-pulse widths of less than 50 ns cannot be expected as L becomes as short as about 4 mu m. >

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